@vic av 8 5 5 0 s pnp epitaxial silicon transistor qw-r201-012,a low voltage high current small signal pnp transistor features *collector current up to 700ma *collector-emitter voltage up to 20 v *complimentary to 8050s applications *class b push-pull audio amplifier *general purpose applications to-92 1 1: emitter 2: collector 3: base absolute maximum ratings ( ta=25 c ,unless otherwise specified ) parameters symbol rating units collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -5 v collector dissipation(ta=25 c ) pc 1 w collector current ic -700 ma junction temperature t j 150 c storage temperature t stg -65 ~ +150 c electrical characteristics (ta=25 c,unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo ic=-100 a,i e =0 -30 v collector-emitter breakdown voltage bv ceo ic=-1ma,i b =0 -20 v emitter-base breakdown voltage bv ebo i e =-100 a,ic=0 -5 v collector cut-off current i cbo v cb =-30v,i e =0 -1 ua emitter cut-off current i ebo v eb =-5v,ic=0 -100 na dc current gain(note) hfe 1 hfe2 hfe3 v ce =-1v,ic=-1ma v ce =-1v,ic=-150 ma v ce =-1v,ic=-500ma 100 120 40 110 400 collector-emitter saturation voltage v ce (sat) ic=-500ma,i b =-50ma -0.5 v base-emitter saturation voltage v be (sat) ic=500ma,i b =-50ma -1.2 v base-emitter saturation voltage v be v ce =-1v,ic=-10ma -1.0 v current gain bandwidth product f t v ce =-10v,ic=-50ma 100 mhz output capacitance cob v cb =10v,i e =0 f=1mhz 9.0 pf
qw-r201-012,a classification of hfe2 rank c d e range 120-200 160-300 280-400 typical characteristic curves fig.1 static characteristics collector-emitter voltage ( v) ic,collector current (ma) 0 0.4 0.8 1.2 1.6 2.0 0 0.1 0.2 0.3 0.4 0.5 i b =0.5ma i b =1.0ma i b =1.5ma i b =2.0ma i b =2.5ma i b =3.0ma fig.2 dc current gain ic,collector current (ma) h fe , dc current gain 10 2 10 1 10 0 10 3 10 3 10 2 10 1 10 0 10 -1 v ce =1v fig.3 base-emitter on voltage 10 -1 10 0 10 1 10 2 ic,collector current (ma) base-emitter voltage (v) 0 0.2 0.4 0.6 0.8 1.0 v ce =1v ic,collector current (ma) 10 3 10 2 10 1 10 0 10 -1 saturation voltage (mv) 10 1 10 2 10 3 10 4 fig.4 saturation voltage fig.5 current gain-bandwidth product fig.6 collector output capacitance v ce (sat) v be (sat) ic=10*i b ic,collector current (ma) 10 0 10 1 10 2 10 3 current gain-bandwidth product,f t (mhz) 10 0 10 1 10 2 v ce =10v collector-base voltage (v) cob,capacitance (pf) 10 3 10 3 10 0 10 1 10 2 10 0 10 1 10 2 10 3 f=1mhz i e =0 @vic av 8 5 5 0 s pnp epitaxial silicon transistor
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